ON Semiconductor MOSFET, SuperFET II 系列, N溝道, Si, Vds=600 V, 37 A, 3引腳 TO-247封裝
Features ? 650 V @ TJ = 150°C ? Typ. RDS(on) = 98 mΩ ? Ultra Low Gate Charge (Typ. Qg = 107 nC) ? Low Effective Output Capacitance (Typ. Coss(eff.) = 109 pF) ? 100% Avalanche Tested ? RoHS Compliant